In the case of the existing silicon-based image sensor, the green/blue absorption wavelength range is very narrow due to the effect of the color filter, the RGB absorbance is asymmetrical, and the low-illuminance characteristics are not good due to parasitic absorption. In addition, as the extinction coefficient of silicon decreases rapidly from blue to red, a thick silicon element is required to absorb sufficient light, and data readout and image signal processing speed are limited due to limitations in driving speed due to charge mobility limitations. In our laboratory, we are researching light-receiving devices for next-generation stacked image sensors based on perovskite halide materials with excellent light absorption characteristics, superior charge transfer, easy band gap control through composition substitution, and process flexibility. We are conducting leading research on the development of next-generation light-receiving thin film and the development of new image sensor arrays.